Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process.
Features
- Low RDS(ON) 3.3Ω (Typ. ) Low gate charge typical @ 19nC (Typ. ) Low Crss typical @ 10.2pF (Typ. ) Improved dv/dt capability
Block Diagram
Ordering Information
Part No. TSM3N80CH C5G TSM3N80CP ROG TSM3N80CZ C0
Package
TO-251 TO-252 TO-220
Packing
75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET
TSM3N80CI C0 ITO-220 Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-S.
TSM3N80 Datasheet
