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TSM3N80 - N-Channel Power MOSFET

General Description

TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process.

Key Features

  • Low RDS(ON) 3.3Ω (Typ. ) Low gate charge typical @ 19nC (Typ. ) Low Crss typical @ 10.2pF (Typ. ) Improved dv/dt capability Block Diagram Ordering Information Part No. TSM3N80CH C5G TSM3N80CP ROG TSM3N80CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM3N80CI C0 ITO-220 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-S.

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Full PDF Text Transcription for TSM3N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM3N80. For precise diagrams, and layout, please refer to the original PDF.

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 800 RDS(on)(Ω) 4.2 @ VGS =10V ID (A) 1.5 General Des...

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T SUMMARY VDS (V) 800 RDS(on)(Ω) 4.2 @ VGS =10V ID (A) 1.5 General Description TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON) 3.3Ω (Typ.) Low gate charge typical @ 19nC (Typ.) Low Crss typical @ 10.2pF (Typ.) Improved dv/dt capability Block Diagram Ordering Information Part No. TSM3N80CH C5G TSM3N80CP ROG TSM3N80CZ C0 Package TO-251 TO-252 TO

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