Datasheet Summary
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
RDS(on)(Ω)
4.2 @ VGS =10V
ID (A)
General Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Features
- -
- - Low RDS(ON) 3.3Ω (Typ.) Low gate charge typical @ 19nC (Typ.) Low Crss typical @ 10.2pF (Typ.) Improved dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM3N80CH C5G TSM3N80CP...