TSM3N90 - 900V N-Channel Power MOSFET

Product Overview

Taiwan Semiconductor

Part number	TSM3N90
Manufacturer	Taiwan Semiconductor
File Size	555.79 KB
Description	900V N-Channel Power MOSFET
Datasheet	TSM3N90 Datasheet
Additional preview pages of the TSM3N90 datasheet.

TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process.

Low RDS(ON) 4.3Ω (Typ. ) Low gate charge typical @ 17nC (Typ. ) Low Crss typical @ 8.7pF (Typ. ) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM3N90CI C0G ITO-220 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C.

📁 Similar Datasheet

Other Datasheets by Taiwan Semiconductor

Published: Jul 10, 2014 |