Datasheet Summary
900V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
RDS(on)(Ω)
5.1 @ VGS =10V
ID (A)
General Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Features
- -
- Low RDS(ON) 4.3Ω (Typ.) Low gate charge typical @ 17nC (Typ.) Low Crss typical @ 8.7pF (Typ.)
Block Diagram
Ordering Information
Part No.
TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0
Package
TO-251...