Description
TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process.
Features
- Low RDS(ON) 4.3Ω (Typ. ) Low gate charge typical @ 17nC (Typ. ) Low Crss typical @ 8.7pF (Typ. )
Block Diagram
Ordering Information
Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0
Package
TO-251 TO-252 TO-220
Packing
75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET
TSM3N90CI C0G ITO-220 Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain C.
TSM3N90 Datasheet
