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TSM3N90 - 900V N-Channel Power MOSFET

General Description

TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process.

Key Features

  • Low RDS(ON) 4.3Ω (Typ. ) Low gate charge typical @ 17nC (Typ. ) Low Crss typical @ 8.7pF (Typ. ) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Channel MOSFET TSM3N90CI C0G ITO-220 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C.

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Full PDF Text Transcription for TSM3N90 (Reference)

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TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 900 RDS(on)(Ω) 5.1 @ VGS =10V ID (A) 1.25 General De...

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T SUMMARY VDS (V) 900 RDS(on)(Ω) 5.1 @ VGS =10V ID (A) 1.25 General Description TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● Low RDS(ON) 4.3Ω (Typ.) Low gate charge typical @ 17nC (Typ.) Low Crss typical @ 8.7pF (Typ.) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.

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