TSCDT12065G1
TSCDT12065G1 is 650V SiC Merged PIN Schottky Diode manufactured by Taiwan Semiconductor.
Taiwan Semiconductor
12A, 650V SiC Merged PIN Schottky Diode
Features
- Max junction temperature 175°C
- MPS structure for high ruggedness to forward current surge events
- High-speed switching possible
- High forward surge capability
- High-frequency operation
- Positive temperature coefficient on VF
- RoHS pliant
- Halogen-free
KEY PARAMETERS
PARAMETER VALUE UNIT
VRRM
IFSM
TJ MAX
°C
Package
TO-220AC-2L
Configuration
Single die
APPLICATIONS
- General purpose
- Switch mode power supplies
- Power factor correction
MECHANICAL DATA
- Case: TO-220AC-2L
- Molding pound meets UL 94V-0 flammability rating
- Terminal: Matte tin plated...
