TSM1N60S Datasheet | Taiwan Semiconductor

TO-92 Pin Definition: 1. Gate 2. Drain 3. Source 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 11 @ VGS =10V ID (A) General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge...