TSM1NB60S Datasheet | Taiwan Semiconductor

600V N-Channel Power MOSFET TO-92 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 10 @ VGS =10V ID (A) General Description The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Features - - - Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Block Diagram Ordering Information Part No. TSM1NB60SCT B0 TSM1NB60SCT B0G TSM1NB60SCT A3 Package TO-92 TO-92 TO-92 Packing 1Kpcs /...