TSM3N80 Datasheet | Taiwan Semiconductor

800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 4.2 @ VGS =10V ID (A) General Description TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. Features - - - - Low RDS(ON) 3.3Ω (Typ.) Low gate charge typical @ 19nC (Typ.) Low Crss typical @ 10.2pF (Typ.) Improved dv/dt capability Block Diagram Ordering Information Part No. TSM3N80CH C5G TSM3N80CP...