TSM2320 Datasheet | Taiwan Semiconductor

20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ .. Features — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities pact and low profile SOT-23 package Block Diagram Ordering Information Part No. TSM2320CX Packing Tape & Reel Package...