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XP161A1265PR-G - Power MOSFET

General Description

The XP161A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

Key Features

  • On-State Resistance : Rds(on)=0.055Ω@ Vgs=4.5V : Rds(on)=0.095Ω@ Vgs=2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Package : SOT-89.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XP161A1265PR-G Power MOSFET ETR11023-004 ■GENERAL DESCRIPTION The XP161A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. 11 2x ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN CONFIGURATION/ MARKING G：Gate S：Source D：Drain ■FEATURES Low On-State Resistance : Rds(on)=0.055Ω@ Vgs=4.5V : Rds(on)=0.095Ω@ Vgs=2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.