Datasheet4U Logo Datasheet4U.com

1SS272 - Silicon Epitaxial Planar Type Diode

📥 Download Datasheet

Datasheet preview – 1SS272

Datasheet Details

Part number 1SS272
Manufacturer Toshiba Semiconductor
File Size 640.98 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet 1SS272 Datasheet
Additional preview pages of the 1SS272 datasheet.

📁 Similar Datasheet

  • 1SS270 - Silicon Diode (Hitachi Semiconductor)
  • 1SS270 - SWITCHING DIODES (Leshan Radio Company)
  • 1SS270 - Silicon Epitaxial Planar Diode (Renesas)
  • 1SS270A - HIGH SPEED SWITCHING DIODE (EIC)
  • 1SS270A - SILICON EPITAXIAL PLANAR DIODE (Sunmate)
  • 1SS270A - Silicon Epitaxial Planar Switching Diode (JGD)
  • 1SS270A - Silicon Epitaxial Planar Diode (Hitachi)
  • 1SS270A - SILICON EPITAXIAL PLANAR H IGH SPEED SWITCHING DIODE (SEMTECH)
  • 1SS270A - Silicon Epitaxial Planar Diode (Renesas)
  • 1SS201 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application  Low forward voltage : VF (3) = 0.92V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance : CT = 0.9pF (typ.) 1SS272 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 200 * mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 4.
Published: |