1SS272
1SS272 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
Features
(1) Low forward voltage: VF(3) = 0.92 V (typ.) (2) Fast reverse recovery time: trr = 1.6 ns (typ.) (3) Small total capacitance: Ct = 0.9 p F (typ.)
3. Packaging and Internal Circuit
1: Cathode1 2: Cathode2 3: Anode2 4: Anode1
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
Reverse voltage
Peak forward current
(Note 1)
300 m A
Average rectified current
(Note 1)
Non-repetitive peak forward surge current
IFSM
(Note 1)
Power dissipation
PD (Note 1), (Note 2),
200 m W
(Note 3)
Junction temperature Storage temperature
(Note 4)
Tj
(Note 3)
(Note 4)
Tstg
(Note 3)
(Note...
