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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
AEC-Q101 Qualified (Note1)
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse surrent
: IR = 5μA (max)
Small package
: SC−59
Note1: For detail information, please contact to our sales.
1SS294
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range
VRM
45
V
VR
40
V
IFM
300
mA
IO
100
mA
JEDEC
TO−236MOD
P
150
mW
JEITA
SC−59
Tj
125
°C
TOSHIBA
2-3F1S
Tstg
−55 to 125
°C
Weight: 12 mg (typ.)
Note: Using continuously under heavy loads (e.g.
1SS294 Datasheet
