1SS294 Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5μA (max) Small package.
Datasheet Details
| Part number | 1SS294 |
|---|---|
| Datasheet | 1SS294_ToshibaSemiconductor.pdf |
| File Size | 341.71 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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