1SS294
1SS294 is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Low Voltage High Speed Switching
- AEC-Q101 Qualified (Note1)
- Low forward voltage
: VF (3) = 0.54V (typ.)
- Low reverse surrent
: IR = 5μA (max)
- Small package
: SC- 59
Note1: For detail information, please contact to our sales.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range
300 m A
100 m A
JEDEC
TO- 236MOD
150 m W
JEITA
SC- 59
Tj
°C
TOSHIBA
2-3F1S
Tstg
- 55 to 125
°C
Weight: 12 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta =...
