1SS294 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5μA (max) Small package.
1SS294 is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba.
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
1SS294 | LOW VOLTAGE HIGH SPEED SWITCHING DIODE |
EIC Semiconductor |
1SS294 | 45V 100mA SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5μA (max) Small package.