1SS378
1SS378 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type
High Speed Switching
Unit: mm z Low forward voltage z Small package
: VF = 0.23V (typ.) @IF = 5m A : SC-70
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
15 10 200
- 100
- 1- 100
V V m A m A A m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55 to 125
°C
Operating temperature range
Topr
- 40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA
SC-70
TOSHIBA
1-2P1B
Weight: 0.006g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
- : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total...
