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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1150
2SA1150
Low Frequency Amplifier Applications
Unit: mm
• High hFE: hFE = 100~320 • Complementary to 2SC2710.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −35 V
Collector-emitter voltage
VCEO −30 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−800
mA
Base current
IB
−160
mA
Collector power dissipation
PC 300 mW
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC JEITA
― ―
temperature, etc.
2SA1150 Datasheet
