| Part number | 2SA1150 |
|---|---|
| Datasheet | 2SA1150_ToshibaSemiconductor.pdf |
| File Size | 157.80 KB |
| Manufacturer | Toshiba |
| Description | TRANSISTOR |
|
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: hFE = 100~320 plementary to 2SC2710. Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation PC 300 mW Junction...
| Part Number | Description |
|---|---|
| 2SA1145 | TRANSISTOR |
| 2SA1160 | Silicon PNP Epitaxial Type Transistor |
| 2SA1162 | Silicon PNP Transistor |
| 2SA1163 | Silicon PNP Transistor |
| 2SA1182 | Silicon PNP Transistor |
| 2SA1012 | TRANSISITOR |
| 2SA1013 | Silicon PNP Transistor |
| 2SA1015 | Silicon NPN TRANSISTOR |
| 2SA1015L | Silicon NPN TRANSISTOR |
| 2SA1020 | PNP Transistor |
