2SA1891
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low collector-emitter saturation voltage: VCE (sat) =
- 0.5 V (max) (IC =
- 1 A)
- High collector power dissipation: PC = 1.3 W (Ta = 25 °C)
- High-speed switching time: tstg = 300 ns (typ.)
- plementary to 2SC5028
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
- 60
- 50
- 6
- 2
- 4
- 0.2 1.3 150
- 55 to 150
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A...
