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2SA1891 - Silicon PNP Epitaxial Type Transistor

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Part number 2SA1891
Manufacturer Toshiba Semiconductor
File Size 144.44 KB
Description Silicon PNP Epitaxial Type Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1891 Power Amplifier Applications Power Switching Applications 2SA1891 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C) • High-speed switching time: tstg = 300 ns (typ.) • Complementary to 2SC5028 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −60 −50 −6 −2 −4 −0.2 1.3 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.
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