2SA1893
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Strobe Flash Applications Audio Power Amplifier Applications
Unit: mm
- h FE(1) = 100 to 320 (VCE =
- 2 V, IC =
- 0.5 A)
- h FE(2) = 70 (min) (VCE =
- 2 V, IC =
- 4 A)
- Low saturation voltage: VCE (sat) =
- 1.0 V (max)
(IC =
- 4 V, IB =
- 0.1 A)
- High-power dissipation: PC = 1.3 W
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IB PC Tj Tstg
- 35
- 20
- 8
- 5
-...
