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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1893
Strobe Flash Applications Audio Power Amplifier Applications
2SA1893
Unit: mm
• hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)
(IC = −4 V, IB = −0.1 A) • High-power dissipation: PC = 1.3 W
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC
ICP
IB PC Tj Tstg
−35 −20 −8 −5
−8
−0.5 1.3 150 −55 to 150
V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.
2SA1893 Datasheet
