2SA1892
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low collector-emitter saturation voltage: VCE (sat) =
- 0.5 V (max) (IC =
- 1 A, IB =
- 0.05 A)
- High collector power dissipation: PC = 1.3 W
- High-speed switching time: tstg = 1.0 μs (typ.)
- plementary to 2SC5029
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
- 50
- 50
- 5
- 3
- 0.2 1.3 150
- 55 to 150
V V V A A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the...
