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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1924
High-Voltage Switching Applications
2SA1924
Unit: mm
• High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max)
(IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
−400 −400
−7 −0.5 −1 −0.25 1.5 10 150 −55 to 150
Electrical Characteristics (Tc = 25°C)
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.
2SA1924 Datasheet
