2SA1924
TOSHIBA Transistor Silicon PNP Triple Diffused Type
High-Voltage Switching Applications
Unit: mm
- High breakdown voltage: VCEO =
- 400 V
- Low saturation voltage: VCE (sat) =
- 1 V (max)
(IC =
- 100 m A, IB =
- 10 m A)
- Collector metal (fin) is fully covered with mold resin.
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
Rating
- 400
- 400
- 7
- 0.5
- 1
- 0.25 1.5 10 150
- 55 to 150
Electrical Characteristics (Tc = 25°C)
Unit V V...
