2SA1926
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low collector saturation voltage: VCE (sat) =
- 0.17 V (max) (IC =
- 1 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 80 V
Collector-emitter voltage
VCEO
- 80 V
Emitter-base voltage
VEBO
- 8 V
Collector current
- 3 A
Base current
- 1 A
Collector power dissipation Junction temperature Storage temperature range
1000 m W
Tj 150 °C
Tstg
- 55 to 150
°C
JEDEC JEITA
― ―
Note 1: Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-7D101A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.2 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please...
