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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1926
Power Amplifier Applications Power Switching Applications
2SA1926
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −80 V
Collector-emitter voltage
VCEO −80 V
Emitter-base voltage
VEBO −8 V
Collector current
IC −3 A
Base current
IB −1 A
Collector power dissipation Junction temperature Storage temperature range
PC
1000
mW
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note 1: Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-7D101A
high temperature/current/voltage and the significant change in temperature, etc.
2SA1926 Datasheet
