The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SB1020A
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD1415A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
−100 −100
−5 −7 −10 −0.7 2.0 30 150 −55 to 150
V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.
2SB1020A Datasheet
