Datasheet Details
| Part number | 2SB1020 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.97 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1020-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Darlingtion Power Transistor.
| Part number | 2SB1020 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.97 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1020-INCHANGE.pdf |
|
|
|
·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.2 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1020 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1020A | Silicon PNP Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SB1021 | PNP Transistor |
| 2SB1022 | PNP Transistor |
| 2SB1023 | PNP Transistor |
| 2SB1024 | PNP Transistor |
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1009 | PNP Transistor |
| 2SB1015 | PNP Transistor |
| 2SB1016 | PNP Transistor |
| 2SB1017 | PNP Transistor |