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2SB1021 - PNP Transistor

General Description

High DC C urrent Gain- : hFE= 2000(Min.)@IC= -3A Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A Good Linearity of hFE Complement to Type 2SD1416 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power

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isc Silicon PNP Darlingtion Power Transistor 2SB1021 DESCRIPTION ·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1416 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.