Datasheet4U Logo Datasheet4U.com

2SB1024 - PNP Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -3A High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) Complement to Type 2SD1414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power ampli

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1024 SILICON POWER TRANSISTOR SavantIC
2SB1024 PNP Transistor Toshiba
2SB1020A Silicon PNP Transistor Toshiba Semiconductor
2SB1021 SILICON POWER TRANSISTOR SavantIC
2SB1022 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1020 PNP Transistor
2SB1021 PNP Transistor
2SB1022 PNP Transistor
2SB1023 PNP Transistor
2SB1005 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -3A ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD1414 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.