2SC3011 - Silicon NPN epitaxial planer Transistor

Toshiba

Datasheet Details

Part number	2SC3011
Manufacturer	Toshiba
File Size	166.59 KB
Description	Silicon NPN epitaxial planer Transistor
Datasheet	2SC3011 Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.