2SC3668
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
- High collector power dissipation: PC = 1000 m W
- High-speed switching: tstg = 1.0 μ (typ.)
- plementary to 2SA1428.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 2 A
Base current
0.5 A
JEDEC
―
Collector power dissipation Junction temperature Storage temperature range
1000 m W
Tj 150 °C
Tstg
- 55 to 150
°C
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions...
