2SC3669
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
- High-speed switching: tstg = 1.0 μs (typ.)
- plementary to 2SA1429
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
80 80 5 2 1 1000 150
- 55 to 150
V V V A A m W °C °C
JEDEC JEITA TOSHIBA
― ― 2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.2 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within...
