2SC3669 datasheet by Toshiba.
| Part number | 2SC3669 |
|---|---|
| Datasheet | 2SC3669_ToshibaSemiconductor.pdf |
| File Size | 143.80 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Epitaxial Type TRANSISTOR |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC3669 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
| Part Number | Description |
|---|---|
| 2SC3665 | NPN EPITAXIAL TYPE TRANSISTOR |
| 2SC3666 | NPN EPITAXIAL TYPE TRANSISTOR |
| 2SC3668 | Silicon NPN Epitaxial Type TRANSISTOR |
| 2SC3605 | Silicon NPN Epitaxial Planar Type Transistor |
| 2SC3606 | Silicon NPN Transistor |
| 2SC3607 | Silicon NPN Transistor |
| 2SC3613 | NPN Transistor |
| 2SC3619 | NPN Transistor |
| 2SC3620 | Silicon NPN Transistor |
| 2SC3621 | NPN Transistor |
