2SC3665
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Audio Power Amplifier Applications Driver-Stage Amplifier Applications
Unit: mm
- plementary to 2SA1425.
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 800 80 1000 150
- 55 to 150 Unit V V V m A m A m W °C °C
JEDEC JEITA TOSHIBA
― ― 2-7D101A
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO h FE (Note) VCE (sat) VBE f T Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 m A, IB = 0 IE = 1 m A,...
