The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5176
High-Current Switching Applications DC-DC Converter Applications
2SC5176
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
100 80 7 5 8 1 1.8 150 −55 to 150
V V V
A
A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-10T1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.5 g (typ.
2SC5176 Datasheet
