2SC5460
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications
Unit: mm
- High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 800 V
Collector-emitter voltage
VCEO 800 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 m A
Base current
IB 25 m A
Collector power dissipation
Ta = 25°C Tc = 25°C
1.5 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEDEC JEITA
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Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum...
