2SC5464FT Datasheet | Toshiba

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications Unit: mm - Low noise figure, high gain. - NF = 1.1d B, |S21e|2 = 12d B (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 60 30 100 125 - 55~125 Unit V V V m A m A m W °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition f T S21e2 (1) S21e2 (2) NF (1) NF (2) VCE = 8 V, IC = 15 m A VCE = 8 V, IC = 15 m A, f = 500 MHz VCE = 8 V, IC = 15 m A, f = 1 GHz VCE = 8 V, IC = 5 m A, f = 500 MHz VCE = 8 V, IC = 5 m A, f = 1 GHz Min Typ. Max Unit 5 7  GHz  17.5  8 12  d B 1 d B ...