The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5466
Dynamic Focus Applications High Voltage Switching Applications High Voltage Amplifier Applications
2SC5466
Unit: mm
• High voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
800 800
5 50 25 2.0 10 150 −55 to 150
V V V mA mA
W
°C °C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.