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2SD2248
Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2248
Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive
Unit: mm
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 1 A, IB = 1 mA) · Built-in zener diode between collector and base
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
(Ta = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
80 ± 10 80 ± 10
8 ±2 ±3 0.5
0.
2SD2248 Datasheet
