Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type
Switching Applications
Unit: mm
- High DC current gain: hFE = 2000 (min)
- Low saturation voltage: VCE (sat) = 1.5 V (max)
- plementary to 2SB1481
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
Rating
100 100
5 ±4 ±6 0.3 2.0 25 150
- 55 to 150
Equivalent Circuit
Unit V V V
°C...
