2SK1930
2SK1930 is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSII.5)
Chopper Regulator, DC- DC Converter, and Motor Drive Applications
Unit: mm l Low drain- source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.) l Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) l Enhancement- mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD Tch...
