representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK2602
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2602
Switching Regulator Applications
z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.
2SK2602 Datasheet
