2SK2604 Description
2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2604 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High forward transfer admittance.
2SK2604 Key Features
- Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.)
- High forward transfer admittance : |Yfs| = 3.8 S (typ.)
- Low leakage current : IDSS = 100 µA (max) (VDS = 640 V)
- Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Dra