2SK2606 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSIII) DC- DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain- source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD IAR EAR Tch Tstg ±30 883 m J 8.5 m J °C - 55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16F1B Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate,...