2SK2662 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	2SK2662
Manufacturer	Toshiba Semiconductor
File Size	554.47 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2662 Datasheet
Additional preview pages of the 2SK2662 datasheet.

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Full PDF Text Transcription

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2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.

Published: Mar 30, 2005 |