2SK2789
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π- MOSV)
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm l 4 V gate drive l Low drain- source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance : |Yfs| = 16 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enhancement- mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
Rating
100 100 ±20 27 108 60
27 6 150
- 55~150
Unit
V V V A A W m J
A m J °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristic...
