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2SK2855
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK2855
UHF BAND AMPLIFIER APPLICATION
(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
VDSS VGSS
ID PD (Note 1)
Tch Tstg
10 ±6 1.0 0.5 150 −55~150
V V A W °C °C
Note:
Using continuously under heavy loads (e.g.
2SK2855 Datasheet
