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2SK2986 - Silicon N Channel MOS Type Field Effect Transistor

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Datasheet Details

Part number 2SK2986
Manufacturer Toshiba
File Size 455.19 KB
Description Silicon N Channel MOS Type Field Effect Transistor
Datasheet download datasheet 2SK2986 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 80 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 1.3 to 2.