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2SK2989 - Silicon N Channel MOS Type Field Effect Transistor

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Part number 2SK2989
Manufacturer Toshiba Semiconductor
File Size 251.98 KB
Description Silicon N Channel MOS Type Field Effect Transistor
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2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) 2SK2989 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement−mode : Vth = 1.0~2.2 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 50 50 ±20 5 15 0.
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