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2SK2989
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
2SK2989
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement−mode : Vth = 1.0~2.2 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
50 50 ±20 5 15 0.