Datasheet4U Logo Datasheet4U.com

2SK2989 - Silicon N Channel MOS Type Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number 2SK2989
Manufacturer Toshiba
File Size 251.98 KB
Description Silicon N Channel MOS Type Field Effect Transistor
Datasheet download datasheet 2SK2989 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) 2SK2989 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement−mode : Vth = 1.0~2.2 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 50 50 ±20 5 15 0.