Datasheet4U Logo Datasheet4U.com

2SK2987 - Silicon N Channel MOS Type Field Effect Transistor

📥 Download Datasheet

Datasheet preview – 2SK2987

Datasheet Details

Part number 2SK2987
Manufacturer Toshiba Semiconductor
File Size 260.28 KB
Description Silicon N Channel MOS Type Field Effect Transistor
Datasheet download datasheet 2SK2987 Datasheet
Additional preview pages of the 2SK2987 datasheet.

📁 Similar Datasheet

  • 2SK2980 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK2980 - Silicon N-Channel MOSFET (Renesas)
  • 2SK2981 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2983 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2984 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2900-01 - N-channel MOS-FET (Fuji Electric)
  • 2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK2902-01MR - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
  • 2SK2903-01MR - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
Other Datasheets by Toshiba Semiconductor
  • 2SK2985 - N-Channel MOSFET
  • 2SK2986 - Silicon N Channel MOS Type Field Effect Transistor
  • 2SK2989 - Silicon N Channel MOS Type Field Effect Transistor
  • 2SK2914 - Silicon N Channel MOS Type Field Effect Transistor
  • 2SK2915 - N-Channel MOSFET
  • 2SK2916 - Silicon N Channel MOS Type Field Effect Transistor
  • 2SK2917 - N-Channel MOSFET
  • 2SK2920 - Silicon N-Channel MOS Type Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2987 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 80 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 1.3~2.
Published: |