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2SK2987

Manufacturer: Toshiba

2SK2987 datasheet by Toshiba.

2SK2987 datasheet preview

2SK2987 Datasheet Details

Part number 2SK2987
Datasheet 2SK2987_ToshibaSemiconductor.pdf
File Size 260.28 KB
Manufacturer Toshiba
Description Silicon N Channel MOS Type Field Effect Transistor
2SK2987 page 2 2SK2987 page 3

2SK2987 Overview

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) 2SK2987 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance.

2SK2987 Key Features

  • Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.)
  • High forward transfer admittance : |Yfs| = 80 S (typ.)
  • Low leakage current : IDSS = 100 µA (max) (VDS = 60 V)
  • Enhancement−mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drai
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