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2SK302 - Silicon N Channel MOS Type Field Effect Transistor

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Part number 2SK302
Manufacturer Toshiba
File Size 365.84 KB
Description Silicon N Channel MOS Type Field Effect Transistor
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF (typ.) • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.) • Recommend operation voltage: 5~15 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±5 V Drain current ID 30 mA Drain power dissipation PD 150 mW Channel temperature Tch 125 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC TO-236 temperature/current/voltage and the significant change in JEITA ― temperature, etc.