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2SK30ATM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK30ATM
Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
Unit: mm
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low noise: NF = 0.5 dB (typ.)
(VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS −50 V
Gate current
IG 10 mA
Drain power dissipation
PD 100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C
JEDEC
TO-92
Note:
Using continuously under heavy loads (e.g.
2SK30ATM Datasheet
