Part 2SK3371
Description N-Channel MOSFET
Category MOSFET
Manufacturer Toshiba
Size 211.29 KB
Toshiba
2SK3371

Overview

  • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)