2SK3376TK datasheet by Toshiba.
| Part number | 2SK3376TK |
|---|---|
| Datasheet | 2SK3376TK_ToshibaSemiconductor.pdf |
| File Size | 188.33 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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mm Ratings (Ta=25°C) 0.45 0.45 1.4±0.05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature .. Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Note: Using continuously under heavy loads (e.g.
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