The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3376TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376TK
For ECM
• Application for Ultra-compact ECM
0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
0.45 0.45 1.4±0.05
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature www.DataSheet4U.com Storage temperature range
Symbol VGDO IG PD Tj Tstg
Rating -20 10 100 125 −55~125
Unit V mA mW °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.
2SK3376TK Datasheet
