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2SK3376TK Datasheet

N-channel MOSFET

Manufacturer: Toshiba

2SK3376TK Overview

mm Ratings (Ta=25°C) 0.45 0.45 1.4±0.05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature .. Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Note: Using continuously under heavy loads (e.g.

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