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2SK3376MFV
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376MFV
For ECM
• Application for Ultra-compact ECM
0.22±0.05 1.2±0.05 0.32±0.05 3 2 0.13±0.05 0.8±0.05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD (Note 1) Tj Tstg Rating -20 10 150 125 −55~125 Unit
1.2±0.05 0.8±0.05
V mA mW °C °C
0.4
1
www.DataSheet4U.com Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.
2SK3376MFV Datasheet
