0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05 5˚
0.15 min. 0.23+0.05.
0.02
1
2
I Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 100.
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Silicon Junction FETs (Small Signal)
2SK3372
Silicon N-Channel Junction
Unit: mm
For impedance conversion in low frequency For electret capacitor microphone I Features
• High mutual conductance gm • Low noise voltage of NV
0.33+0.05 –0.02 3
0.10+0.05 –0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05 5˚
0.15 min.
0.23+0.05 –0.02
1
2
I Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 100 −20 to +80 −55 to +125 Unit V V mA mA mA mW °C °C
0 to 0.01
0.52±0.
2SK3372 Datasheet
