2SK3372 Datasheet | Panasonic

Features - High mutual conductance gm - Low noise voltage of NV 0.33+0.05 - 0.02 3 0.10+0.05 - 0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. 0.23+0.05 - 0.02 I Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 100 - 20 to +80 - 55 to +125 Unit V V m A m A m A m W °C °C 0 to 0.01 0.52±0.03 5˚ 1: Drain 2: Source 3: Gate SSSMini3-F1 Package Marking Symbol: 1H I Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain current Symbol ID - 1 IDSS Mutual conductance Noise voltage Voltage gain gm NV GV1 GV2 GV3 ∆GV. f- 2 Voltage gain difference Electrostatic discharge - 3 GV2 - GV1 GV1 - GV3 ESD C = 200 p F, R = 0 Ω Conditions VDS = 2.0 V, RD = 2.2 kΩ ± 1% VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 VD = 2.0 V, VGS = 0, f = 1 k Hz VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 p F, A-Curve VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 p F, e G = 10 m V, f = 1 k Hz VD = 12 V, RD = 2.2 kΩ ± 1% CO = 5 p F, e G = 10 m V, f = 1 k Hz VD = 1.5 V, RD = 2.2 kΩ ± 1% CO = 5 p F, e G = 10 m V, f = 1 k Hz VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 p F, e G = 10 m V, f = 1 k Hz to 70 Hz 0 0 ±200 - 7.5 - 4.0 - 8.0 - 4.7 - 1.5 - 5.0 0 1.7 4.0 1.7 V d B Min 100 107 660 1 600 4 Typ Max 460 470 µS m V d B Unit µA Note) - 1: ID is assured for IDSS. - 2: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.) - 3: Test method of electrostatic discharge are based on Standard of Electronic Industries Association of Japan EIAJ ED-4701 Environmental and endurance test methods for semiconductor devices. Judgment standard is product specification. 0.15 max. 0.15...