0.01
2.20±0.15
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature
VDSO VDGO IDSO IDGO IGSO
PD Topr Tstg
20 20 2 2 2 200.
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Silicon Junction FETs (Small Signal)
2SK3427
Silicon N-Channel Junction
For impedance conversion in low frequency For electret capacitor microphone
I Features • High mutual conductance gm • Low noise voltage of NV
0.40
+0.10 –0.05
3 12
1.5±0.2 5.8±0.2
2.1±0.1
5˚
Unit: mm
0.12
+0.02 –0.01
2.20±0.15
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage Drain-gate voltage Drain-source current Drain-gate current Gate-source current Allowable power dissipation Operating ambient temperature Storage temperature
VDSO VDGO IDSO IDGO IGSO
PD Topr Tstg
20 20 2 2 2 200 −20 to +80 −55 to +150
Unit V V mA mA mA
mW °C °C
(0.95) (0.95) 1.9±0.1 2.9±0.2
10˚
(0.5)
0.7±0.
2SK3427 Datasheet
