2SK3374 Datasheet | Panasonic

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) Switching Regulator Applications - - - - Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) High forward transfer admittance: ïYfsï = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k W) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 1 2 1.3 122 1 0.13 150 -55 to150 Unit V V V A A W m J A m J °C °C Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-8M1B Weight: 0.54 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch-a) Max 96.1 Unit °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 m H, RG = 25 W, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2002-08-09 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ïYfsï Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 m A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 m A, VGS = 0 V VDS = 10 V, ID = 1 m A VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min ¾ ±30 ¾ 450 2.0 ¾ 0.3 ¾ ¾ ¾ ¾ VOUT ¾ 10 9 RL = 400 W ¾...