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2SK3374
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
2SK3374
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) High forward transfer admittance: ïYfsï = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 1 2 1.3 122 1 0.
2SK3374 Datasheet
