Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 100 125.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon Junction FETs (Small Signal)
2SK3547
Silicon n-channel MOSFET
Unit: mm
For switching ■ Features
• High-speed switching • Wide frequency band • Gate-protection diode built-in
0.33+0.05 –0.02 3
0.10+0.05 –0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05 5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 ±7 100 200 100 125 −55 to +125 Unit V V mA mA mW °C °C
0.15 min.
0.23+0.05 –0.02
1
2
0 to 0.01
0.52±0.
2SK3547 Datasheet
